SnO2 thin films were fabricated by pulsed laser deposition (PLD) technique
using Sn metallic target under ambient O-2 gas. X-ray diffraction (XRD) and
atomic force microscopy (AFM) were used to investigate the morphology and
structure of the films. From a study of the gas sensing characteristics of
SnO2 films, it was evident that if the shorter wavelength of the laser beam
was used for film deposition. the better sample was obtained. The sample,
heated to 375 degreesC during ablation and post-annealed at 500 degreesC fo
r 4 h, showed higher sensitivity compared to sample which was not heated. I
t can be explained, that the substrate heating is needed to compensate the
kinetic energy of particles in laser plasma decreased due to loose-focusing
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