Tin(IV) oxide is widely used in the Taguchi sensor for the detection of red
ox-active gases. The performance of the sensor critically depends on oxygen
transport parameters since perceptible values of the chemical diffusion co
efficient of oxygen cause severe drift effects. The present work investigat
es the kinetics of oxygen exchange by two independent methods, an EPR relax
ation technique and the well-known conductivity relaxation technique. The e
xperiments were performed on nominally undoped single crystals which contai
ned traces of iron and aluminum. In the temperature range from 700 to 1000
degreesC the chemical diffusion coefficient is obtained as D-delta = 0.02 c
m(2) s(-1) exp(-0.9 eV/kT). The results of the relaxation experiments were
complicated by additional processes occurring on different time scales. A d
oping independence assumed, we conclude that the kinetics of drift processe
s are determined by the surface exchange reaction of oxygen on SnO2 rather
than by the chemical diffusion of oxygen. (C) 2001 Elsevier Science B.V. Al
l rights reserved.