Water after-etching of n-type porous silicon in an electric field

Water after-etching of porous silicon in an external electric field is stud ied. The application of the electric field, irrespective of its strength an d orientation, is shown to decrease the etch rate. When the field vector is directed from the porous layer inward to the sample, the electrode potenti al in the silicon-electrolyte system sharply changes; for E > 6 kV/cm, the changes become periodic. Experimental data suggest the presence of a circul ating current in the single-crystal silicon-electrolyte-quantum wire system . (C) 2001 MAIK "Nauka/Interperiodica".