Study of oxide semiconductor sensor materials by selected methods

This work deals with the complex characterisation of oxide semiconductor ga s sensor materials, like beta -Ga2O3, WO3 and WO3/TiO2, by DC resistance me asurements, impedance spectroscopy, SIMS, DSC and XRD. Impedance spectrosco py was used to study the oxygen/beta -Ga2O3 interaction between 567 and 790 degreesC, (grain size: 30, 150 and 1000 nm), in the context of the bulk an d grain boundary conduction phenomena. The mechanism of interaction was inv estigated also by the SIMS technique. The thermal. structural and electric properties of WO3 and chemically prepared WO3/TiO2 powders as well as thick films were compared by DSC, XRD and DC resistance measurements, in the tem perature range of 25-500 degreesC. (C) 2001 Elsevier Science B.V. All right s reserved.