Evaluation of atmospheric pollution by two semiconductor gas sensors

Citation
J. Brunet et al., Evaluation of atmospheric pollution by two semiconductor gas sensors, THIN SOL FI, 391(2), 2001, pp. 308-313
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
391
Issue
2
Year of publication
2001
Pages
308 - 313
Database
ISI
SICI code
0040-6090(20010716)391:2<308:EOAPBT>2.0.ZU;2-0
Abstract
After a brief introduction about: the different gaseous pollutants present in the atmosphere; the cause of their concentration rise: their consequence s on human health; and the different devices used to monitor each gas, two types of semiconductor gas sensors are presented. The first of them is a si mple InP-based resistive sensor. The sensitive layer is a thin n-type InP e pitaxial layer grown on a semi-insulating InP substrate. The electrical res istance, increasing in the presence of oxidising gases, is measured between two ohmic contacts. The second sensor is a thin film of copper phthalocyan ine deposited by sublimation on an alumina substrate. The conductivity of t he phthalocyanine layer increases in the presence of oxidising gases. Influ ence of NO2 and O-3, especially at low concentration, is investigated. Infl uence of other parameters like operating temperature or interfering gases i s also studied. In conclusion, optimisation of sensor characteristics to im prove the evaluation of oxidising air pollutants concentrations is discusse d. (C) 2001 Elsevier Science B.V. All rights reserved.