INTRINSIC DEFECTS IN CUBIC SILICON-CARBIDE

Irradiation of fast particles like 1 MeV electrons and 2 MeV protons w as made for sin,ale crystalline cubic silicon carbide (3C-SiC) grown e pitaxially on Si by chemical vapor deposition in order to introduce po int defects in tile material. Intrinsic point defects in 3C-SiC have b een characterized by electron spin resonance (ESR), position annihilat ion spectroscopy (PAS), Hall and photoluminescence (PL) techniques. Th e structure and annealing behavior of intrinsic defects. e.g. monovaca ncies at silicon and carbon sublattice sites, are described based on t he results obtained by ESR and FAS. The contributions of such point de fects to electrical and optical properties of 3C-SiC are discussed usi ng the Hall and PL results: with a brief review of published work.