DEEP DEFECT CENTERS IN SILICON-CARBIDE MONITORED WITH DEEP-LEVEL TRANSIENT SPECTROSCOPY

Authors
DALIBOR T PENSL G MATSUNAMI H KIMOTO T CHOYKE WJ SCHONER A NORDELL N
Citation
T. Dalibor et al., DEEP DEFECT CENTERS IN SILICON-CARBIDE MONITORED WITH DEEP-LEVEL TRANSIENT SPECTROSCOPY, Physica status solidi. a, Applied research, 162(1), 1997, pp. 199-225
Citations number
51
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
162
Issue
1
Year of publication
1997
Pages
199 - 225
Database
ISI
SICI code
0031-8965(1997)162:1<199:DDCISM>2.0.ZU;2-H
Abstract
Electrical data obtained from deep level transient spectroscopy invest igations on deep defect centers in the 3C, 4H, and 6H SiC polytypes ar e reviewed. Emphasis is put on intrinsic defect centers observed in as -grown material and subsequent to ion implantation or electron irradia tion as well as on defect centers caused by doping with or implantatio n of transition metals (vanadium, titanium, chromium, and scandium).