INTRINSIC SIC SIO2 INTERFACE STATES

The energy distribution of electron states at SiC/SiO2 interfaces prod uced by oxidation of various (3C; 4H, 6H) SiC polytypes is studied by electrical analysis techniques and internal photoemission spectroscopy . A similar distribution of interface traps over the SiC bandgap is ob served for different polytypes indicating a common nature of interfaci al defects. Carbon clusters at the SiC/SiO2 interface and near-interfa cial defects in the SiO2 are proposed to be responsible for the domina nt portion of interface traps, while contributions caused by dopant-re lated defects and dangling bonds at the SiC surface are not observed.