High-average-power self-starting mode-locked Ti : sapphire laser with a broadband semiconductor saturable-absorber mirror

Authors
Sun, JH Zhang, RB Wang, QY Chai, L Pang, DQ Dai, JM Zhang, ZG Torizuka, K Nakagawa, T Sugaya, T
Citation
Jh. Sun et al., High-average-power self-starting mode-locked Ti : sapphire laser with a broadband semiconductor saturable-absorber mirror, APPL OPTICS, 40(21), 2001, pp. 3539-3541
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Optics & Acoustics
Journal title
APPLIED OPTICS
ISSN journal
00036935 → ACNP
Volume
40
Issue
21
Year of publication
2001
Pages
3539 - 3541
Database
ISI
SICI code
0003-6935(20010720)40:21<3539:HSMT:S>2.0.ZU;2-D
Abstract
We present a novel high-power, self-starting mode-locked Ti:sapphire laser with a semiconductor saturable-absorber mirror as the starter element. This laser, whose slope efficiency is 228, generates pulses with an average pow er as high as 1.7 W and a pulse width as short as 16 fs. The self-starting process is also investigated. (C) 2001 Optical Society of America.