Visible luminescence from a-SiN films doped with Er and Sm

Relatively strong and narrow red and green light emission has been achieved from amorphous (a-) SiN films independently doped with Er3+ and Sm3+ ions. The films were deposited by cosputtering a Si target partially covered wit h small pieces of metallic Er (and Sm) in an atmosphere of pure nitrogen. A s a consequence of the deposition method and conditions, the films have an amorphous structure, and contents of Er (and Sm) in the low 0.5 at. %. All characterizations were accomplished on as-deposited samples and at room tem perature and included: ion-beam analysis (Rutherford backscattering spectro metry and nuclear reaction analysis) and optical techniques (light absorpti on, Raman scattering, and photoluminescence and cathodoluminescence). A det ailed examination of the experimental results allowed the identification of all luminescence features existing in the films. (C) 2001 American Institu te of Physics.