Parallel integration and characterization of nanoscaled epitaxial latticesby concurrent molecular layer epitaxy and diffractometry

Citation
T. Ohnishi et al., Parallel integration and characterization of nanoscaled epitaxial latticesby concurrent molecular layer epitaxy and diffractometry, APPL PHYS L, 79(4), 2001, pp. 536-538
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
4
Year of publication
2001
Pages
536 - 538
Database
ISI
SICI code
0003-6951(20010723)79:4<536:PIACON>2.0.ZU;2-0
Abstract
A material highway for building up crystal lattices and heterojunctions fro m molecular layers has been developed based on a concept of combinatorial l attice integration. The atomic-scale precision of automated multilane pavin g of multilayered thin films is in situ monitored by concurrent reflection high-energy electron diffraction. The designed nanolayered structures are r apidly verified by a concurrent x-ray diffractometer which has been develop ed for the purpose of this technology. This scheme corresponds to the concu rrent two-dimensional Merrifield synthesis to form a variety of sequence-co ntrolled layer structures in parallel and should be widely applicable for s ystematic fabrication and property screening of nanostructured materials an d devices. (C) 2001 American Institute of Physics.