C-60 decomposition on some transition metal and semiconductor surfaces

Citation
Nr. Gall et al., C-60 decomposition on some transition metal and semiconductor surfaces, FUL SCI TEC, 9(2), 2001, pp. 241-246
Citations number
16
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
FULLERENE SCIENCE AND TECHNOLOGY
ISSN journal
1064122X → ACNP
Volume
9
Issue
2
Year of publication
2001
Pages
241 - 246
Database
ISI
SICI code
1064-122X(2001)9:2<241:CDOSTM>2.0.ZU;2-H
Abstract
A deep understanding of fullerene-surface interaction regularities is a key to widespread fullerene use. We have studied C-60 molecular adsorption, th ermal transformation and initial film growth stages on four transition meta ls: W, Mo, Re and Ir in the wide temperature range 300-2000K. Experiments w ere performed in ultra-high vacuum (UHV) at P < 10(-9) Torr by high resolut ion Auger electron spectroscopy, atomic force microscopy and thermal desorp tion mass-spectrometry using an absolutely calibrated flux of the depositin g C-60 molecules.