An X-band high-power amplifier using SiGe/Si HBT and lumped passive components

Authors
Ma, ZQ Mohammadi, S Lu, LH Bhattacharya, P Katehi, LPB Alterovitz, SA Ponchak, GE
Citation
Zq. Ma et al., An X-band high-power amplifier using SiGe/Si HBT and lumped passive components, IEEE MICR W, 11(7), 2001, pp. 287-289
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
ISSN journal
15311309 → ACNP
Volume
11
Issue
7
Year of publication
2001
Pages
287 - 289
Database
ISI
SICI code
1531-1309(200107)11:7<287:AXHAUS>2.0.ZU;2-L
Abstract
We report the design and fabrication of a compact microwave monolithic inte grated circuit (MMIC) amplifier, which demonstrates high output power at X- Band, A single-stage power amplifier is demonstrated, with a double-mesa ty pe SiGe/Si HBT as the active device and spiral inductors and MIM capacitors as lumped passive components. At 8.4 GHz, a linear gain of 8.7 dB, an outp ut power at peak efficiency of 23 dBm, and a saturated output power P-sat o f 25 dBm, are measured. To our knowledge, this is the first MMIC X-Band pow er amplifier using SiGe/Si HBTs.