A dynamical load-cycle charge model for RF power FETs

Authors
Collantes, JM Bouysse, P Portilla, J Quere, R
Citation
Jm. Collantes et al., A dynamical load-cycle charge model for RF power FETs, IEEE MICR W, 11(7), 2001, pp. 296-298
Citations number
11
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
ISSN journal
15311309 → ACNP
Volume
11
Issue
7
Year of publication
2001
Pages
296 - 298
Database
ISI
SICI code
1531-1309(200107)11:7<296:ADLCMF>2.0.ZU;2-5
Abstract
A nonlinear charge model for RF power FETs is presented. The model, intende d for use in harmonic-balance simulators, calculates the time evolution of the nonlinear charge in a period of the steady-state regime. For that, the experimentally extracted capacitances are integrated using the device dynam ic load cycle as integration path. The proposed approach is technology inde pendent and it has been applied here to a Si LDMOSFET and a SiC MESFET. Loa d pull measurements have been performed to verify the validity of the model .