High-temperature operating 1.3-mu m quantum-dot lasers for telecommunication applications

High-performance 1.3-mum-emitting quantum-riot lasers were fabricated by se lf-organized growth of InAs dots embedded in GaInAs quantum wells. The infl uence of the number of quantum-dot layers on the device performance was inv estigated. Best device results were achieved with six-dot layers. From the length dependence, a maximum ground state gain of 17 cm(-1) for six dot lay ers could be determined, Ridge waveguide lasers with a cavity length of 400 mum and high-reflection coatings show threshold currents of 6 mA and outpu t powers of more than 5 mW. Unmounted devices can be operated in continuous wave mode up to 85 degreesC. A maximum operating temperature of 160 degree sC was achieved in pulsed operation for an uncoated 2.5-mm-long ridge waveg uide laser.