85 degrees C investigation of uncooled 10-Gb/s directly modulated InGaAsP RWG GC-DFB lasers

Authors
White, JK Blaauw, C Firth, P Aukland, P
Citation
Jk. White et al., 85 degrees C investigation of uncooled 10-Gb/s directly modulated InGaAsP RWG GC-DFB lasers, IEEE PHOTON, 13(8), 2001, pp. 773-775
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
ISSN journal
10411135 → ACNP
Volume
13
Issue
8
Year of publication
2001
Pages
773 - 775
Database
ISI
SICI code
1041-1135(200108)13:8<773:8DCIOU>2.0.ZU;2-Y
Abstract
The 10-Gb/s directly modulated performance of InGaAsP RWG GC-DFB lasers is investigated up to 85 degreesC. At room temperature, devices have relaxatio n oscillation frequencies f(relax) greater than 20 GHz and damping Gamma gr eater than 100 GHz, f(relax) is greater than 6 GHz at 85 degreesC. Constant output power or extinction ratio are possible from 25 degreesC to 75 degre esC chip temperature, with open eyes observable up to 85 degreesC. Back-to- back transmission measurements in a Nortel Networks OC-192 system show erro r free transmission of a 2(23) - 1 pseudorandom bit sequence at 83 degreesC .