Polarization-insensitive optical amplifiers in AlInGaAs

In this letter, we report the theoretical modeling and the fabrication of p olarization-insensitive optical amplifiers at 1300 nm in AlInGaAs-InP mater ial system, Gain calculations, using the k.p method, show that the introduc tion of 0.33% tensile strain into a three-quantum-well structure can achiev e gain-matching over a wide energy spectrum. The amplifiers, fabricated and tested, show excellent polarization insensitivity (less than 0.3 dB) at 12 80 nm,vith a gain of 11 dB at 150 mA. Gain-bandwidth needs to be improved b y employing antireflection coatings to suppress the facet reflectivity.