Waveguide avalanche photodiode operating at 1.55 mu m with a gain-bandwidth product of 320 GHz

Authors
Kinsey, GS Campbell, JC Dentai, AG
Citation
Gs. Kinsey et al., Waveguide avalanche photodiode operating at 1.55 mu m with a gain-bandwidth product of 320 GHz, IEEE PHOTON, 13(8), 2001, pp. 842-844
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
ISSN journal
10411135 → ACNP
Volume
13
Issue
8
Year of publication
2001
Pages
842 - 844
Database
ISI
SICI code
1041-1135(200108)13:8<842:WAPOA1>2.0.ZU;2-O
Abstract
An In0.52Al0.48 As-In-0.53 Ga0.47As waveguide avalanche photodiode with a r ecord gain-bandwidth product of over 320 GHz has been demonstrated. A bandw idth of 28 GHz was achieved at low gains with low excess noise and a quantu m efficiency of 16% at 1.55 mum.