SI SI1-XGEX EPITAXIAL LAYERS AND SUPERLATTICES - GROWTH AND STRUCTURAL CHARACTERISTICS/

Authors
SIZOV FF KLADKO VP PLYATSKO SV SHEVLYAKOV AP KOZYREV YN OGENKO VM
Citation
Ff. Sizov et al., SI SI1-XGEX EPITAXIAL LAYERS AND SUPERLATTICES - GROWTH AND STRUCTURAL CHARACTERISTICS/, Semiconductors, 31(8), 1997, pp. 786-788
Citations number
6
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
31
Issue
8
Year of publication
1997
Pages
786 - 788
Database
ISI
SICI code
1063-7826(1997)31:8<786:SSELAS>2.0.ZU;2-J
Abstract
Si, Ge, and Si1-xGex epitaxial layers and Si/Si1-xGex superlattices ha ve been obtained on (100) and (111) silicon substrates by molecular-be am epitaxy. The growth processes and the structural characteristics an d chemical composition of the structures were studied by x-ray diffrac tion and Auger spectroscopy. It is shown that under the experimental c onditions for obtaining Si/Si1-xGex superlattices structurally perfect , strained superlattices with satellites up to +/-5 orders can be obta ined. (C) 1997 American Institute of Physics.