PROPERTIES OF TELLURIUM-DOPED GALLIUM ANTIMONIDE SINGLE-CRYSTALS GROWN FROM NONSTOICHIOMETRIC MELT

The electric and luminescence properties of tellurium-doped gallium an timonide single crystals grown from gallium-enriched melt by Czochrals ki's method have been investigated. It was determined that the crystal s possess n-type conductivity and are strongly compensated. It was fou nd that toward the end of the ingot the concentration of the impurity tellurium increases more rapidly than that of the compensating accepte rs. The possibilities of obtaining the properties of GaSb single cryst als by growing the crystals from nonstoichiometric melts followed by h eat treatment of the material are discussed. (C) 1997 American Institu te of Physics.