CALCULATION OF 2P LEVELS FOR THERMAL DOUBLE DONORS IN SILICON

A two-center model is developed to explain the electronic structure of thermal double donors (TDD) in silicon. Calculations of 2p levels of singly ionized TDD's are performed in the effective mass approximation . From a comparison of the calculated results with the experimental da ta, the internuclear distance between the two electrically active atom s is evaluated as 0.75-0.95 nm for the TDD1-TDD3 and 1.35-1.75 nm for the next four species:TDD4-TDD7. (C) 1997 American Institute of Physic s.