INASSB INASSBP DIODE-LASERS WITH SEPARATE ELECTRICAL AND OPTICAL CONFINEMENT, EMITTING AT 3-4 MU-M/

Authors
DANILOVA TN DANILOVA AP ERSHOV OG IMENKOV AH KOLCHANOVA NM STEPANOV MV SHERSTNEV VV YAKOVLEV YP
Citation
Tn. Danilova et al., INASSB INASSBP DIODE-LASERS WITH SEPARATE ELECTRICAL AND OPTICAL CONFINEMENT, EMITTING AT 3-4 MU-M/, Semiconductors, 31(8), 1997, pp. 831-834
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
31
Issue
8
Year of publication
1997
Pages
831 - 834
Database
ISI
SICI code
1063-7826(1997)31:8<831:IIDWSE>2.0.ZU;2-X
Abstract
Diode lasers based on InAsSb/InAsSbP with separate electrical and opti cal confinement, emitting in the wavelength interval 3-4 mu m, are inv estigated. The lasers attain a higher operating temperature when elect rical confinement is created by means of type-II heterojunctions. Inte rface Auger recombination is suppressed in lasers of this type, and th e experimental current density is close to the theoretically calculate d value for the case of predominant volume Auger recombination at a te mperature of 180-220 K. (C) 1997 American Institute of Physics.