INJECTION CURRENTS IN MIXED-LAYER GA0.5IN1.5S3 SINGLE-CRYSTALS

Authors
ASKEROV IM ASADOV FY
Citation
Im. Askerov et Fy. Asadov, INJECTION CURRENTS IN MIXED-LAYER GA0.5IN1.5S3 SINGLE-CRYSTALS, Semiconductors, 31(8), 1997, pp. 864-865
Citations number
12
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
31
Issue
8
Year of publication
1997
Pages
864 - 865
Database
ISI
SICI code
1063-7826(1997)31:8<864:ICIMGS>2.0.ZU;2-Y
Abstract
Single crystals of Ga0.5In1.5S3 are prepared by chemical transport rea ction, and the current-voltage characteristics and temperature depende nce of the electrical conductivity are investigated. It is shown that the current transmission mechanism in an In-Ga0.5In1.5S3-In structure is associated with monopolar injection. (C) 1997 American Institute of Physics.