ACCEPTORS IN CD1-XMNXTE (X-LESS-THAN-0.1)

Authors
VLASENKO AI BABENTSOV VN VLASENKO ZK SVECHNIKOV SV RARENKO IM ZAKHARUK ZI NIKONYUK ES SHLYAKHOVYI VL
Citation
Ai. Vlasenko et al., ACCEPTORS IN CD1-XMNXTE (X-LESS-THAN-0.1), Semiconductors, 31(8), 1997, pp. 869-871
Citations number
15
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
31
Issue
8
Year of publication
1997
Pages
869 - 871
Database
ISI
SICI code
1063-7826(1997)31:8<869:AIC(>2.0.ZU;2-9
Abstract
Acceptor defects, which control conductivity and recombination in Cd1- xMnxTe (0 less than or equal to x less than or equal to 0.1), have bee n observed experimentally and investigated by electric and luminescenc e methods. The energy levels of the defects and the composition depend ence of the energy levels have been determined. The physicochemical na ture of these defects is discussed. (C) 1997 American Institute of Phy sics.