In-plane optical anisotropy of symmetric and asymmetric (001) GaAs/Al(Ga)As superlattices and quantum wells

Citation
Xl. Ye et al., In-plane optical anisotropy of symmetric and asymmetric (001) GaAs/Al(Ga)As superlattices and quantum wells, J APPL PHYS, 90(3), 2001, pp. 1266-1270
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
90
Issue
3
Year of publication
2001
Pages
1266 - 1270
Database
ISI
SICI code
0021-8979(20010801)90:3<1266:IOAOSA>2.0.ZU;2-R
Abstract
Two sensitive polarized spectroscopies, reflectance difference spectroscopy and photocurrent difference spectroscopy, are used to study the characteri stic of the in-plane optical anisotropy in the symmetric and the asymmetric (001) GaAs/Al(Ga)As superlattices (SLs). The anisotropy spectra of the sym metric and the asymmetric SLs show significant difference: for symmetric on es, the anisotropies of the 1HH-->1E transition (1H1E) and 1L1E are dominan t, and they are always approximately equal and opposite; while for asymmetr ic ones, the anisotropy of 1H1E is much less than that of 1L1E and 2H1E, an d the anisotropy of 3H2E is very strong. The calculated anisotropy spectra within the envelope function model agree with the experimental results, and a perturbation approach is used to understand the role of the electric fie ld and the interface potential in the anisotropy. (C) 2001 American Institu te of Physics.