Computer modeling of dual-band HgCdTe photovoltaic detectors

Citation
K. Jozwikowski et A. Rogalski, Computer modeling of dual-band HgCdTe photovoltaic detectors, J APPL PHYS, 90(3), 2001, pp. 1286-1291
Citations number
31
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
90
Issue
3
Year of publication
2001
Pages
1286 - 1291
Database
ISI
SICI code
0021-8979(20010801)90:3<1286:CMODHP>2.0.ZU;2-I
Abstract
The performance of middle wavelength/long wavelength (MW/LW) dual-band HgCd Te photovoltaic detectors was examined theoretically. An original iteration scheme was used to solve the system of nonlinear continuity equations and the Poisson equation. The effect of composition and doping profiles on the heterojunction detector parameters is presented. It is assumed that the per formance of photodiodes is due to thermal generation governed by the Auger mechanism. All quantities are functions of the electric potential and Fermi quasi-levels. The results of calculations are presented as maps showing sp atial distribution of electrical potential, photoelectrical gain, sensitivi ty, and density of noise generation. The theoretical predictions of heteroj unction device parameters are compared with available experimental data. (C ) 2001 American Institute of Physics.