Carrier dynamics in low-temperature grown GaAs studied by terahertz emission spectroscopy

Authors
Nemec, H Pashkin, A Kuzel, P Khazan, M Schnull, S Wilke, I
Citation
H. Nemec et al., Carrier dynamics in low-temperature grown GaAs studied by terahertz emission spectroscopy, J APPL PHYS, 90(3), 2001, pp. 1303-1306
Citations number
31
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
90
Issue
3
Year of publication
2001
Pages
1303 - 1306
Database
ISI
SICI code
0021-8979(20010801)90:3<1303:CDILGG>2.0.ZU;2-7
Abstract
Ultrafast dynamics of free carriers in low-temperature grown GaAs was studi ed using time-domain terahertz emission spectroscopy. The subpicosecond fre e-carrier lifetime was determined for a set of annealed samples with differ ent growth temperatures (175-250 degreesC), the carrier mobility was also e stimated. The influence of the growth temperature on the ultrafast carrier trapping is discussed. (C) 2001 American Institute of Physics.