Partial graphitization of diamond crystals under high-pressure and high-temperature conditions

Citation
J. Qian et al., Partial graphitization of diamond crystals under high-pressure and high-temperature conditions, J APPL PHYS, 90(3), 2001, pp. 1632-1637
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
90
Issue
3
Year of publication
2001
Pages
1632 - 1637
Database
ISI
SICI code
0021-8979(20010801)90:3<1632:PGODCU>2.0.ZU;2-S
Abstract
Diamond powders of different sizes were compressed at pressures up to 2.5 G Pa and heated up to 1700 K. Extent of partial graphitization was estimated from x-ray diffraction and Raman scattering. For example, in the presence o f water, at p=2.0 GPa and T=1473 K about 22% of diamond was converted into graphite. The rate of this transformation decreases in time and becomes neg ligibly small after about 20 min of treatment at high-pressure, high-temper ature conditions. (Graphitization starts at the surface of the crystals and then graphite crystals grow in the direction perpendicular to the surface and along the surface.) Distribution of graphite on the surface of diamond crystals was obtained from Raman microimaging. (C) 2001 American Institute of Physics.