Citation
Cvb. Tribuzy et al., Carbon delta-doped AlGaAs grown by metalorganic vapor phase epitaxy, J APPL PHYS, 90(3), 2001, pp. 1660-1662
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979
→ ACNP
Volume
90
Issue
3
Year of publication
2001
Pages
1660 - 1662
Database
ISI
SICI code
0021-8979(20010801)90:3<1660:CDAGBM>2.0.ZU;2-#
Abstract
Good-optical-quality C delta-doped AlGaAs layers grown by metalorganic vapo
r phase epitaxy using CBr4 with the impurities confined over not more than
5 A and with doping levels above 1x10(12) cm(-2) are obtained. Such layers
are found to be adequate for use in the fabrication of nipi superlattices f
or amplitude modulation. Yet, little flexibility is found in the growth con
ditions, in particular for the V to III fluxes ratio, for obtaining such la
yers. (C) 2001 American Institute of Physics.