Maximum modal gain of a self-assembled InAs/GaAs quantum-dot laser

Authors
Asryan, LV Grundmann, M Ledentsov, NN Stier, O Suris, RA Bimberg, D
Citation
Lv. Asryan et al., Maximum modal gain of a self-assembled InAs/GaAs quantum-dot laser, J APPL PHYS, 90(3), 2001, pp. 1666-1668
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
90
Issue
3
Year of publication
2001
Pages
1666 - 1668
Database
ISI
SICI code
0021-8979(20010801)90:3<1666:MMGOAS>2.0.ZU;2-K
Abstract
Gain and threshold current of a self-assembled InAs/GaAs quantum-dot (QD) l aser are simulated. A small overlap integral of the electron and hole wave functions in pyramidal QDs is shown to be a possible reason for the low sin gle-layer modal gain, which limits lasing via the ground-state transition a t short (under a millimeter) cavity lengths. (C) 2001 American Institute of Physics.