Synthetic semiconductor diamond electrodes: Comparison of electrochemical impedance at the growth and nucleation surfaces of a coarse-grained polycrystalline film

A comparative study of the impedance of the growth and nucleation surfaces of a free-standing film of polycrystalline diamond deposited from RF-plasma and moderately doped with boron is performed. Using Mott-Schottky plots, t he acceptor concentration is determined. It is shown that in the diamond bu lk adjacent to the film growth side, which has more perfect crystal structu re, this concentration is much lower than that near the nucleation side, wh ere the film consists of submicron-sized grains.