Temperature effect on gate leakage currents in gate dielectric films of GaAs MOSFET

The gate dielectrics of Ga2O3(AS(2)O(3)) of the GaAs MOSFET were prepared b y a low-cost and low-temperature liquid-phase chemically enhanced oxidation method. The temperature and oxide thickness dependence of gate dielectric films on GaAs MOSFET have been investigated. The leakage current and dielec tric breakdown field were both studied. Both gate leakage current density a nd breakdown electrical field were found to depend on the oxide thickness a nd operating temperature. The increasing trend in gate leakage current and the decreasing trend in breakdown electrical field were observed upon reduc ing oxide thickness from 30 to 12 nm and increasing operating temperature f rom -50 degreesC to 200 degreesC. (C) 2001 Elsevier Science Ltd. All rights reserved.