Citation
W. Wu et Js. Yuan, Copper electromigration modeling including barrier layer effect, SOL ST ELEC, 45(12), 2001, pp. 2011-2016
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101
→ ACNP
Volume
45
Issue
12
Year of publication
2001
Pages
2011 - 2016
Database
ISI
SICI code
0038-1101(200112)45:12<2011:CEMIBL>2.0.ZU;2-3
Abstract
Electromigration lifetime considering the barrier layer effect under the DC
and pulsed DC stress is analyzed numerically. The barrier layer used to st
op the copper diffusion also improves the interconnect lifetime. The improv
ement of lifetime under the DC stress is higher than that under the pulsed
DC stress. The lifetime model predictions are also compared with experiment
al data. Good agreement between the model predictions and experiments is ob
tained. (C) 2001 Elsevier Science Ltd. All rights reserved.