Electromigration subjected to Joule heating under pulsed DC stress

Authors
Wu, W Yuan, JS Kang, SH Oates, AS
Citation
W. Wu et al., Electromigration subjected to Joule heating under pulsed DC stress, SOL ST ELEC, 45(12), 2001, pp. 2051-2056
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
45
Issue
12
Year of publication
2001
Pages
2051 - 2056
Database
ISI
SICI code
0038-1101(200112)45:12<2051:ESTJHU>2.0.ZU;2-F
Abstract
This article reports an electromigration-lifetime model that incorporates t he effect of Joule heating under pulsed DC condition. This mediati-time-to- failure model accounts for applied current density, duty factor, frequency, thermal time constant, and interconnect geometry. The model predictions re ported in this work agree very well with numerical simulation and experimen tal data over a wide range of current densities and frequencies. (C) 2001 E lsevier Science Ltd. All rights reserved.