Temperature dependent photo luminescence of porous InP

Temperature dependent photoluminescence (PL) spectra of porous InP prepared by wet-electrochemical techniques are presented. Compared to the PL spectr a of the bulk InP wafer measured at the corresponding temperatures, two pea ks are observed in porous InP. One peak, which dominates at temperatures ab ove 150 K, shows blue shift about 14 meV, while the other peak, which domin ates at temperatures below 120 K, shows red shift about 33 meV. Quantum con finement effect is assumed to be the origin of the blue shifted PL. The red shifted PL emission is very sensitive to chemical treatment and is suggest ed to be due to the radiative recombination via surface states. (C) 2001 Pu blished by Elsevier Science Ltd.