GIANT OSCILLATIONS OF COUPLING STRENGTH IN MO SI MULTILAYERS WITH CONSTANT SEMICONDUCTOR THICKNESS/

We report the observation of anisotropy ratio gamma interlayer-couplin g-strength oscillations with variation of metal-layer thickness in Mo/ Si multilayer series with constant Si-layer thickness. These oscillati ons correlate with previously found oscillations of T-c, R-300/R-n, an d dH(c perpendicular to)/dT. the giant amplitude or gamma oscillations makes one believe that all oscillation effects are due to the variati on of the Josephson coupling. The possible origin of these unusual eff ects is discussed.