Photovoltaic diodes based on iodine- and bromine-doped pentacene single cry
stals as well as thin films (TFs) have been prepared. Two different device
structures, a Schottky diode with a Mg/Al back contact and a heterojunction
with a ZnO:Al window layer, are investigated. An immense increase of the p
hotovoltaic conversion efficiency of these devices is observed upon doping
with iodine as well as bromine, which is ascribed to a reduction of the ser
ies resistance, an increase in quantum efficiency, and a red shift of the a
bsorption spectrum. AM1.5 efficiencies of 2.7 and 4.5% are obtained for sin
gle crystal Schottky diodes and heterojunctions, respectively. In addition,
efficiencies exceeding 2% are realized in TF devices on flexible plastic s
ubstrates. (C) 2001 Elsevier Science B.V. All rights reserved.