THE GROWTH OF INDIUM ON THE H-TERMINATED SI(111) 1X1 SURFACE

The growth morphology and thr chemical interactions of thin In layers on an H-terminated Si(lll)1 x 1 surface, prepared by a wet chemical pr ocedure, have been investigated by scanning tunneling microscopy (STM) and synchrotron radiation based photoemission. The interactions betwe en the In overlayer and the H-Si(1 x 1) surface are weak as evidenced by valence band and core level photoemission spectra. As on the clean Si(111)7 x 7 surface an island growth mode of In is observed on the H- Si(1 x 1) surface, but the island structures display significant diffe rences in shape and growth behaviour between the two surfaces, indicat ing a modified In growth kinetics mediated by the H adlayer. This surf actant-type role of H is discussed. Annealing of the room temperature deposited In layers results in remarkable coverage-dependent morpholog y changes which signal the predominance of kinetic effects in the room temperature growth. For higher In coverages (> 25 monolayers) well-or dered single crystalline In islands are formed at room temperature as indicated by atomically resolved STM images and angle resolved photoem ission measurements. (C) 1997 Elsevier Science B.V.