GAP ANISOTROPY AND PHONON RENORMALIZATION IN HTS

Citation
E. Sigmund et al., GAP ANISOTROPY AND PHONON RENORMALIZATION IN HTS, Zeitschrift für physikalische Chemie, 201, 1997, pp. 245-261
Citations number
56
Categorie Soggetti
Chemistry Physical","Physics, Atomic, Molecular & Chemical
ISSN journal
09429352
Volume
201
Year of publication
1997
Part
1
Pages
245 - 261
Database
ISI
SICI code
0942-9352(1997)201:<245:GAAPRI>2.0.ZU;2-E
Abstract
Anisotropy of the order parameter (gap) in high-T-c superconductors is explained by unscreened interaction of charge carriers with long-wave optical phonons. Screening is absent due to the low frequency of long -wave plasmons in layered structures. Numerical calculations of the ga p anisotropy caused by the unscreened interaction show good agreement of the model with the experiment. The influence of the superconducting gap anisotropy on the phonon dispersion is discussed. It is found tha t along specific directions of the Brillouin zone the lineshape (energ y and linewidth) of phonons depends strongly on the type of anisotropy of the gap. In this context, the recent experimental results performe d on YBa2Cu3O7 single crystals are discussed. The data can be well des cribed in terms of the anisotropic gap function obtained from the non- totally screened interaction of charge carriers with long-wave optical phonons.