THE EFFECTS OF ANNEALING DISPOSITION ON ALPHA-SIC THIN-FILMS PREPAREDBY PULSED-LASER DEPOSITION

SiC thin films have been grown in situ on Si[100] substrates using a X eCl excimer laser (lambda = 308 nm). The films were deposited at diffe rent temperatures, from room temperature to 900 degrees C. The structu re of the films was studied using modern analysis techniques, such as AES, XPS, TEM, STM, and IR. Polycrystalline alpha-SiC thin films grown on Si[100] substrates were obtained at 800 degrees C. The thin films were annealed at 1000 degrees C in a vacuum system. The effect of anne aling disposition on the structure of the film was studied. TEM analys is shows that the annealed film has a hexagonal structure which includ es 4H, 8H or 4H + 8H. (C) 1997 Elsevier Science Ltd.