A STUDY ON THE RELATION BETWEEN FILM QUALITY AND DEPOSITION RATE FOR AMORPHOUS-SILICON FILMS GROWN BY ELECTRON-CYCLOTRON-RESONANCE PLASMA CHEMICAL-VAPOR-DEPOSITION USING H-2 SIH4/

Tile relation between film quality and deposition rate of hydrogenated amorphous silicon films deposited by electron cyclotron resonance pla sma chemical vapor deposition using H-2/SiH1 was been investigated. Th e properties of amorphous silicon films were improved with increasing deposition rate: photoconductivity increased and optical band gap, ful l width at half maximum and the ratio of the concentration of dihydrid e to that of monohydride decreased. The high deposition rate was a ver y important factor to obtain high quality amorphous silicon films grow n by electron cyclotron resonance plasma chemical vapor deposition usi ng H-2/SiH4.