CONTROL OF ORGANIC INTERFACES WITH A THIN-FILM OF SILICON MONOXIDE BETWEEN 8-HYDROXYQUINOLINE ALUMINUM AND DIAMINE LAYERS IN AN ORGANIC EL DIODE

The insertion of a thin film of silicon monoside (SiO) at the intel fa ce of the 8-hydroxyquinoline aluminuum (Alq(3)) and the diamine deriva tive (TPD) layers in the electroluminescent (EL) diode enhances the em ission from the Alq(3) layer. The mechanism of emission enhancement fr om the hetero interlace has teen discussed with respect to the emissio n spectra of the diodes containing a thin film of a marker layer which was inserted into the emissive layer near the interface, The SiO laye r thickness dependence on EL intensity ill the diode with the SiO laye r has been discussed.