IRO2 PB(ZR,TI1-X)O-3(PZT)/PT FERROELECTRIC THIN-FILM CAPACITORS RESISTANT TO HYDROGEN-ANNEALING DAMAGE/

Authors
KUSHIDAABDELGHAFAR K MIKI H YANO F FUJISAKI Y
Citation
K. Kushidaabdelghafar et al., IRO2 PB(ZR,TI1-X)O-3(PZT)/PT FERROELECTRIC THIN-FILM CAPACITORS RESISTANT TO HYDROGEN-ANNEALING DAMAGE/, JPN J A P 2, 36(8A), 1997, pp. 1032-1034
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
36
Issue
8A
Year of publication
1997
Pages
1032 - 1034
Database
ISI
SICI code
Abstract
The PZT polarization hysteresis characteristics in a Pt/PZT/Pt ferroel ectric capacitor are degraded by annealing in a hydrogen-containing at mosphere due to the catalytic effect of the top Pt electrode. This can be avoided by using an IrO2/PZT/Pt capacitor structure as we proposed . During hydrogen annealing of the as-grown capacitor: the top IrO2 el ectrode is deoxidized. degrading the capacitor characteristics. Howeve r: the polarization hysteresis characteristics are preserved after hyd rogen annealing at 300 degrees C if the IrO2/PZT/Pt capacitor is pre-a nnealed in oxygen at 600 degrees C.