KINETICS OF LOW-TEMPERATURE CHARGE-CARRIER RECOMBINATION IN DISORDERED HOPPING SYSTEMS

Energetic relaxation and recombination of charge carriers are consider ed at low temperatures in disordered hopping systems, taking the incre asing occupation of deep localized states into account. It is shown th at, in the course of carrier relaxation controlled by monomolecular re combination, the occupational density of localized states does not cha nge with time. If bimolecular recombination represents the dominant mo de of the carrier-density relaxation, all deep localized states will s ooner or later be occupied and the filling effect plays an important r ole in the process of relaxation.