THE INFLUENCE OF HIGH-ENERGY ELECTRON-IRRADIATION AND BORON IMPLANTATION ON THE OXIDE THICKNESS IN THE SIO2 SI SYSTEM/

The SiO2/Si system exposed to irradiation with 11-12 MeV electrons was studied by soft-x-ray emission spectroscopy using the variable-exciti ng-electron-energy, optical ellipsometry, and nuclear reaction techniq ues. For the SiO2/Si system prepared on an n-substrate, oxidation of S i was observed, and the thickness of the SiO2 layer after electron irr adiation was estimated. For the SiO2/Si system prepared on a p-Si subs trate, irradiation-induced oxidation was not observed. It was found th at preliminary boron implantation in the SiO2/n-Si system blocks oxida tion of the n-Si substrate exposed to electron irradiation.