GROWTH HABIT OF CRYSTALS OF REFRACTORY COMPOUNDS PREPARED FROM HIGH-TEMPERATURE SOLUTIONS

The growth habit of single crystal refractory compounds (borides, carb ides and silicides) obtained using a solution-melt method involving va rious growth conditions is reviewed. The effect of external and intern al factors on the growth habit is analyzed. The influence of such exte rnal factors as the cooling mode, the cooling rate, the effect of vari ation of solute concentration, the stoichiometry of the initial compon onts, the presence of additives in the system, the change of the maxim um soaking temperature, the nature of the initial components and the s olvent metal and microgravity on the growth habit are described. Examp les of various anisotrophic properties in crystals of refractory compo unds as well as data on crystal microhardness anisotropy, obtained by the authors, are given. In conclusion the comparative evaluation of th e effect of external factors on growth habit is provided.