ATOMIC-LEVEL STRESS AND LIGHT-EMISSION OF CE ACTIVATED SRS THIN-FILMS

Citation
Wl. Warren et al., ATOMIC-LEVEL STRESS AND LIGHT-EMISSION OF CE ACTIVATED SRS THIN-FILMS, Journal of applied physics, 82(4), 1997, pp. 1812-1814
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
82
Issue
4
Year of publication
1997
Pages
1812 - 1814
Database
ISI
SICI code
0021-8979(1997)82:4<1812:ASALOC>2.0.ZU;2-5
Abstract
We find that the Ce3+ ion in polycrystalline sputtered SrS:Ce thin fil ms resides in a distorted octahedral environment, as opposed to the cu bic host environment. Using electron paramagnetic resonance and x-ray diffraction analysis, we show that the degree of axial distortion is r elated to the preferential growth direction of the SrS films. To first order, the blue-emission properties (emission wavelength and decay ti mes) of the SrS:Ce films do not appear to be affected by the amount of distortion in the local Ce3+ environment. (C) 1997 American Institute of Physics.