C. Doughty et al., SPATIAL-DISTRIBUTION OF CU SPUTTER EJECTED BY VERY-LOW ENERGY ION-BOMBARDMENT, Journal of applied physics, 82(4), 1997, pp. 1868-1875
Filling of submicron width trenches with Cu from a highly ionized plas
ma is sensitive to both the directionality of the depositing flux and
reflection and resputtering at the film surface. The spatial distribut
ions of Cu atoms sputtered by He+, Ar+, and Xe+ ions incident at 30 de
grees, 45 degrees and 60 degrees and over an ion energy range of simil
ar to 55-600 eV have been investigated. In all cases, the distribution
is forward directed and cannot be described by a cosine distribution
about the surface normal. Decreasing energy, increasing angles of inci
dence, and increasing ion mass yield more forward directed distributio
ns. For similar to 55 eV Ar+ incident at 60 degrees, similar to 85% of
the resputtered flux is in the forward direction. From these distribu
tions, in a 50% ionized physical vapor deposition system the depositin
g flux due to forward directed resputtering is estimated to be of the
same order of magnitude as the neutral flux. (C) 1997 American Institu
te of Physics.