CUBIC (IN,GA)N LAYERS GROWN ON GAAS(001) BY DC PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY

Authors
YANG B BRANDT O JENICHEN B MULLHAUSER J PLOOG KH
Citation
B. Yang et al., CUBIC (IN,GA)N LAYERS GROWN ON GAAS(001) BY DC PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY, Journal of applied physics, 82(4), 1997, pp. 1918-1920
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
82
Issue
4
Year of publication
1997
Pages
1918 - 1920
Database
ISI
SICI code
0021-8979(1997)82:4<1918:C(LGOG>2.0.ZU;2-1
Abstract
Cubic (In,Ga)N layers with In contents up to 11% are grown on GaAs(001 ) by de plasma-assisted molecular beam epitaxy. Comparatively high sub strate temperatures are used to desorb In accumulated on the growth fr ont by the massive In segregation in this material system. We report t he observation of band-edge photoluminescence and the dependence of th e emission energy on In composition for the (In,Ga)N layers. (C) 1997 American Institute of Physics.