RESONANCE EFFECTS ON THE AUGER-SPECTRA OF SILICON IN POROUS SILICON

Anger spectra of pure silicon, in-situ oxidized silicon and porous sil icon have been recorded at different photon energies across the K abso rption edge of silicon and silica. The results show an intense resonan t effect with, between the normal Auger lines of pure silicon and sili ca, a new contribution whose intensity and energy position depends on the incident photon energy. We discuss these results.